Low-temperature Ultrasonic Spray Deposited Aluminum Doped Zinc Oxide Film and Its Application in Flexible Metal-Insulator-Semiconductor Diodes

In this work, the fabrication and characterization of fully solution-processed flexible Metal-Insulator-Semiconductor (MIS) diodes are presented. The MIS structure was fabricated using aluminum doped zinc oxide and spin-on glass as semiconductor and insulator, respectively. The maximum temperature used was 200°C. The electrical characteristics of the flexible devices show a good agreement with the typical characteristics of a semiconductor diode even while bent to 5mm tensile radius.