Design and Characterization of GaN P-I-n Diodes for Betavoltaic Devices

The performance of gallium nitride (GaN) p-i-n diodes were investigated for use as a betavoltaic device. Dark IV measurements showed a turn on-voltage of approximately 3.2 V, specific-on-resistance of 15.1 m Omega cm(2) and a reverse leakage current of -0.14 mA/cm(2) at -10 V. A clear photo-response was observed when IV curves were measured under a light source at a wavelength of 310 nm (4.0 eV). In addition, GaN p-i-n diodes were tested under an electron-beam in order to simulate common beta radiation sources ranging from that of H-3 (5.6 keV average) to Ni-63 (17 keV average). From this data, we estimated output powers of 53 nW and 750 nW with overall efficiencies of 0.96% and 4.4% for our device at incident electron energies of 5.6 keV and 17 keV corresponding to H-3 and Ni-63 beta sources respectively. (c) 2017 Published by Elsevier Ltd.