Resonator-Qwips For 10.6 Micron Detection

We designed R-QWIP devices for narrowband 10.6 mu m detection. Despite the low doping of 0.2 and 0.3 x 10(18) cm(-3) and thin absorbing layer thickness of 1 mu m, the observed QE is 29% and 26%, respectively. This level of QEs, combined with the large photoconductive gain in a thin layer, produces large conversion efficiencies of 20% and 15% for large photocurrents. The high photocurrent and low dark current brought by low doping thus allow the QWIPs to be BLIP at 65 K with an 11 mu m cutoff. The projected NETD is 20 mK at 60 K, demonstrating the high performance of R-QWIPs.