Gan-Based Double Gate Mosfets: Effect Of Gate Length

The performance of GaN-based Double Gate (DG) MOSFETs have been explored with different gate lengths. LG for future high performance switching device applications. Devices have been designed according to the international technology roadmap for semiconductor (ITRS)-2013. The ON-state currents are found to be 11.38 mA/mu m and 9.67 mA/mu m for LG = 11.6 nm (year 2019) and LG =8 nm (year 2023), respectively. These values are higher than that of conventional Si-based DG-MOSFETs. Simulation results show that the proposed GaN-based DG MOSFETs provide lesser values of subthreshold slope (SS) and drain induced barrier lowering (DIBL). These results indicate that proposed devices are plausible candidate for fabricating of future high-speed, high performance (HP) logic devices.