谷歌浏览器插件
订阅小程序
在清言上使用

Excellent interface properties of pentacene based metal-oxide-semiconductor diodes utilizing HfON higk-k gate insulator

M. Liao, Y. U. Song, J. Ishikawa, T. Sano,Jun Gao,Hiroshi Ishiwara,Shun-ichiro Ohmi

The Japan Society of Applied Physics(2010)

引用 1|浏览2
暂无评分
关键词
diodes,insulator,metal-oxide-semiconductor
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要