Chrome Extension
WeChat Mini Program
Use on ChatGLM
VIPCreated with Sketch.

Characterization and improved endurance for HfO2 resistive memory with CMP treated TiN bottom electrode

P. S. Chen, Y. S. Chen, H. Y. Lee,T. Y. Wu,W. H. Liu,P. Y. Gu,F. Chen,M. J. Tsai

The Japan Society of Applied Physics（2011）

Cited 0|Views4
No score
Key words
resistive memory,tin bottom electrode,endurance
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined