Investigation of Metal Co-evaporated Copper Seed Layers for Copper-Plated Heterojunction Solar Cells
Journal of the Korean Physical Society(2018)
Abstract
For the reduction of optical loss and contact material cost in silicon heterojunction (SHJ) solar cells, copper plating has been considered as a suitable metallization technique. However, a plated copper contact on an indium-tin-oxide (ITO) generally has low a reliability of adhesion. For this reason, proper seed layer materials are required for adhesive copper plating. As a requirement for a suitable seed layer material, the contact resistance between the seed and the ITO is also important, as well as the adhesion, because high series resistance results in a low fill factor. In this research, we deposited a seed layer by co-evaporating copper with other metals (Cu-X). The contact resistivity ( ρ c ) of the Cu-X deposited on ITO was evaluated by using the transfer length method (TLM). In order to confirm the influence of the work function of the Cu-X, we measured the contact potential difference (CPD) by using photoemission in an air system (PAS). Moreover, phase and we analyzed the crystallite size by using X-ray diffraction (XRD) measurement.
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Key words
Silicon heterojunction solar cell,Copper plating,Seed layer,Contact resistivity
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