Electrolyte-oxide-semiconductor Structures As Ph Sensors Based on Resistive-Switching Characteristic
2016 IEEE 29th International Conference on Micro Electro Mechanical Systems (MEMS)(2016)
Abstract
An electrolyte-oxide-semiconductor (EOS) structure is reported as a pH sensor in this paper, which provides a new method of pH sensing based on the resistive-switching characteristic for the first time. The concept of conductive filaments is introduced for EOS structures to explain their resistive-switching property. We find that the threshold-voltage shift in the C-V and I-V curves approximately linearly increases with the augment of electrolyte solution's pH value from 1 to 12, showing a linear sensitivity about 46.3 mV/pH. The easily fabricated EOS sensor array could provide multiple and synchronic measurements. The different reverse leakage-current phenomena of EOS sensors with different electrolytes might broaden chemical sensing applications.
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Key words
chemical sensors,conducting materials,electrolytes,leakage currents,pH measurement,sensor arrays,C-V curve,EOS sensor array,I-V curve,chemical sensing application,conductive filament,electrolyte-oxide-semiconductor structure,pH sensor,resistive-switching characteristics,reverse leakage-current phenomena,threshold-voltage shift
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