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Enhanced performance and reliability of NILC-TFTs using FSG buffer layer

Chienchih Chen,Y S Wu,Chihpang Chang

Materials Chemistry and Physics（2012）

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Abstract
A new manufacturing method for Ni-metal-induced lateral crystallization thin film transistors (NILC-TFTs) using fluorine-silicate-glass (FSG) was proposed. In FSG-TFTs, fluorine ion was implanted into the buffer oxide layer to form FSG before NILC processes. It was found FSG-TFTs exhibit high field-effect mobility, low threshold voltage, low subthreshold slope, high ON/OFF current ratio, low trap state density, low interface trap state density, and good reliability compared with typical NILC-TFTs. (c) 2011 Elsevier B.V. All rights reserved.
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Key words
Fluorinated-silicate-glass (FSG),Polycrystalline silicon thin-film transistors (poly-Si TFTs),Ni-metal-induced lateral crystallization (NILC)
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