Investigation of Al-Ti Ohmic Contact to N-Type 4H-SiC

In this study, investigation on MAX phase Ti3SiC2 onto N-type 4H-SiC and its ohmic-behaved are reported. The Al and Ti were co-deposited, in different proportions, at room temperature by magnetron sputtering of metallic Al and Ti targets in high vacuum system. The samples were annealing at 1000 degrees C in Ar atmosphere. The identification of phases and morphology has been studied by X-ray diffraction and High Resolution Transmission Electron Microscopy. The formed contact showed polarity dependence on SiC substrate but not of Aluminium proportion. The observations show that Ti3SiC2 compound is in perfect epitaxy to 4H-SiC. The evolution of contact system from Schottky to Ohmic behaved is observed by I-V measurements for annealing temperatures larger than 700 degrees C.