Nanomechanical Studies of Doped Ingap/Gaas Epilayers

Dipika Robidas,K. R. Deepthi,C. Arunseshan,G. Attolini,M. Bosi,D. Arivuoli

PROCEEDING OF INTERNATIONAL CONFERENCE ON RECENT TRENDS IN APPLIED PHYSICS & MATERIAL SCIENCE (RAM 2013)（2013）

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摘要

The Nanomechanical characteristics of InGaP semiconductor alloys doped with Si and Zn grown on GaAs (100) semi-insulating substrate is studied. The mechanical characteristics of the material such as hardness, stiffness, contact depth etc. were studied byNanoindentation technique with different probe geometries like Berkovich and Vickers. The results show significant variation in the mechanical parameters with respect to the tip geometry and dopant concentration.

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关键词

Nanoindentation,InGaP,Hardness,Reduced modulus,nanomechanical

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