Defect Characterization in He Implanted Si
AIP conference proceedings(2009)
Abstract
Conventional and high resolution transmission electron microscopes are used to characterize helium ion‐implanted Si. 140 keV He ions were implanted into (100) Si to a fluence of 1×1017/cm2. After annealing at 873 K for 1 h, various linear and planar defects are formed. No He bubbles are observed. After annealing at 1223 K for 1 h, large voids and perfect dislocation loops are formed. A stress field around the voids and the spherical shape of the voids suggest the retention of He gas atoms inside the bubble.
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Key words
Ion Irradiation,voids,gas atom implantation,defects
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