Defect Characterization in He Implanted Si

Conventional and high resolution transmission electron microscopes are used to characterize helium ion‐implanted Si. 140 keV He ions were implanted into (100) Si to a fluence of 1×1017/cm2. After annealing at 873 K for 1 h, various linear and planar defects are formed. No He bubbles are observed. After annealing at 1223 K for 1 h, large voids and perfect dislocation loops are formed. A stress field around the voids and the spherical shape of the voids suggest the retention of He gas atoms inside the bubble.