A Self-Aligned, Electrically Separable Double-Gate MOS Transistor Technology for Dynamic Threshold Voltage ApplicationA Talbot,D Dutartre,Y Lefriec,F Leverd,R Pantel,M Haond,Thomas Skotnicki,M Jurczak,Romain Gwoziecki,D Lenoble,P Ribot,M Paoli,Joao P Martins,B Tormen, A Grouiller,J Galvier,S Monfraymag(2003)引用 36|浏览5暂无评分AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要