Microstructural Studies of Co Silicide Layers Formed on SiGe and SiGeC
MRS proceedings/Materials Research Society symposia proceedings(1996)
摘要
Transmission electron microscopy is used to investigate the structural development as a function of the annealing temperature of Co-silicides prepared on SiGe and SiGeC. The transition temperature from Co(SiGe) into Co(SiGe)(2) is higher for SiGeC than for SiGe.
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