Sapphire surface patterning using femtosecond laser micromachining
Applied Physics A(2012)
摘要
This study presents an alternative method for micron-resolution patterning of a sapphire surface utilizing the characteristic of an ultra-short pulse (10 −15 s) from ytterbium (Yb) femtosecond laser (FS-laser) irradiation. Conventional processes often involve several steps, such as wet chemical or dry etching, for surface structuring of sapphire. In this study, two-dimensional array patterns on the sapphire surface with an area of 5×5 mm 2 and a depth of 1.2±0.1 μm can be directly and easily fabricated by a single step of the FS-laser process, which involves 350-fs laser pulses with a wavelength of 517 nm at a repetition rate of 100 kHz. The measured ablation depths on the sapphire surface display that the proposed process can be under well-controlled conditions. Based on the design changes for being quickly implemented in the micromachining process, a FS laser can be a promising and competitive tool for patterning sapphire with an acceptable quality for industrial usage.
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关键词
Sapphire,Scanning Speed,Ablation Depth,Threshold Fluence,Energy Fluence
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