Uv-Assisted Modification and Removal Mechanism of A Fluorocarbon Polymer Film on Low-K Dielectric Trench Structure
ACS applied materials & interfaces(2015)
摘要
In this study, we report the first chemical characterization of a plasma-deposited model fluoropolymer on low-k dielectric nanostructure and its decomposition in UV/O2 conditions. Carbonyl incorporation and progressive removal of fluorocarbon fragments from the polymer were observed with increasing UV (≥230 nm) irradiation under atmospheric conditions. A significant material loss was achieved after 300 s of UV treatment and a subsequent wet clean completely removed the initially insoluble fluoropolymer from the patterned nanostructures. A synergistic mechanism of UV light absorption by carbonyl chromophore and oxygen incorporation is proposed to account for the observed photodegradation of the fluoropolymer.
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关键词
low-k dielectrics,fluorocarbon polymer,postetch residue removal,UV irradiation,photosensitization,singlet oxygen
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