Evaluation of Al-doped SPE ultrashallow P+N junctions for use as PNP SiGe HBT emitters
Shanghai(2008)
摘要
The possible use of aluminum-mediated SPE silicon islands as ultrashallow Al-doped emitters in PNP SiGe HBTs is evaluated by electrical characterization of Si PNP test structures and 1-D MEDICI device simulations. The Al-doped emitters display electrical properties similar to B-doped Si. The surface recombination velocity nu at the Al-metal to SPE-Si interface and the minority carrier lifetime tau have been determined to be in the ranges of 7times105 -1.2times106 cm/s and 2-3times10-8 s, respectively.
更多查看译文
关键词
ge-si alloys,heterojunction bipolar transistors,semiconductor device models,semiconductor materials,surface recombination,1d medici device simulation,pnp hbt emitters,spe,sige:al,ultrashallow p+n junction,doping,temperature,etching,medical simulation
AI 理解论文
溯源树
样例
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要