Evaluation of Al-doped SPE ultrashallow P+N junctions for use as PNP SiGe HBT emitters

Yann Civale,G Lorito,Cuiqin Xu,L K Nanver,R Van Der Toorn

Shanghai（2008）

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摘要

The possible use of aluminum-mediated SPE silicon islands as ultrashallow Al-doped emitters in PNP SiGe HBTs is evaluated by electrical characterization of Si PNP test structures and 1-D MEDICI device simulations. The Al-doped emitters display electrical properties similar to B-doped Si. The surface recombination velocity nu at the Al-metal to SPE-Si interface and the minority carrier lifetime tau have been determined to be in the ranges of 7times105 -1.2times106 cm/s and 2-3times10-8 s, respectively.

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关键词

ge-si alloys,heterojunction bipolar transistors,semiconductor device models,semiconductor materials,surface recombination,1d medici device simulation,pnp hbt emitters,spe,sige:al,ultrashallow p+n junction,doping,temperature,etching,medical simulation

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