Technology and production of HBT epitaxial material

D C Streit,A K Oki,T Block, D Lammert,M Hoppe,D K Umemoto,M Wojtowicz

Vancouver, BC, Canada（1997）

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摘要

We report sustained high-yield, high-volume production of HBT epitaxial material and devices for commercial applications. We also report the use of nondestructive material characterization to predict the performance of the fabricated devices.

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关键词

bipolar integrated circuits,heterojunction bipolar transistors,integrated circuit technology,integrated circuit testing,integrated circuit yield,molecular beam epitaxial growth,nondestructive testing,hbt chips,hbt epitaxial devices,hbt epitaxial material production,hbt epitaxial material technology,commercial applications,nondestructive material characterization,performance

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