Kinetic properties of p-type Mg2Si0.4Sn0.6 solid solutions

M I Fedorov,V K Zaitsev,I Eremin,E A Gurieva,A T Burkov,P P Konstantinov,M V Vedernikov,A Yu Samunin,G N Isachenko

international conference on telecommunications（2003）

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摘要

In this paper the results of the study of kinetic properties of the Mg2Si0.4Sn0.6 solid solution are presented. It is shown that it is possible to produce the Mg2Si0.4Sn0.6 solid solution with of p-type with various hole concentration (up to 4 · 1019cm-3). Seebeck and Hall coefficients and electrical conductivity were measured in the temperature range 100 - 800 K. The hole mobility in these solid solutions is lower than that of electrons. Some parameters of valence band are determined.

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关键词

hall effect,seebeck effect,effective mass,electrical conductivity,hole density,hole mobility,manganese compounds,silicon compounds,tin compounds,hall coefficients,mg2si0.4sn0.6,seebeck coefficients,hole-concentration,kinetic properties,p-type mg2si0.4sn0.6 solid solutions,valence band,kinetics,electric conductivity,solid solution

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