A 0.15µm gate InAlN/GaN HEMT with thin barrier layer

Jianjun Zhou,Xun Dong,Haiyn Lu,C Kong,Yuechan Kong,Tangsheng Chen,Chen Chen

Electron Devices and Solid-State Circuits（2014）

引用 0|浏览5

暂无评分

摘要

High quality thin barrier layer In0.18Al0.82N/GaN heterostructure was grown by metal-organic chemical vapor deposition (MOCVD). A 0.15 μm gate InAlN/GaN HEMT was fabricated with 1A/mm drain current at zero gate bias. The device show good pinch-off performance. A high transconductance of 482 mS/mm and current gain cutoff frequency of 80GHz were measured without de-embedding.

查看译文

关键词

iii-v semiconductors,mocvd,aluminium compounds,gallium compounds,high electron mobility transistors,indium compounds,semiconductor device manufacture,wide band gap semiconductors,hemt,in0.18al0.82n-gan,drain current,frequency 80 ghz,high transconductance,metal-organic chemical vapor deposition,size 0.15 mum,thin barrier layer,zero gate bias,inaln/gan hemt,millimeter-wave,thin barrier,millimeter wave

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要