Selenium-Doped Silicon-on-Insulator Waveguide Photodetector With Enhanced Sensitivity at 1550 nm
Photonics Technology Letters, IEEE(2011)
摘要
This letter describes the fabrication and characterization of a silicon-on-insulator all silicon rib waveguide photodetector with sensitivity at 1550 nm. Response at the subbandgap wavelength is provided through the introduction of deep levels via Se ion implantation. Se ions were implanted into the waveguide using an ion beam energy of 240 keV at a dose of 3×1015 cm-2. The most efficient device has a responsivity of 25 mA/W at 3 V reverse bias. The fabrication is fully compatible with standard complementary metal-oxide-semiconductor processes.
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关键词
ion implantation,subbandgap wavelength,rib waveguides,selenium,optical waveguides,silicon waveguide,wavelength 1550 nm,electron volt energy 240 keV,photodetectors,deep levels,optical fabrication,silicon-on-insulator,silicon,Si-SiO2,deep level,integrated optics,Deep level,elemental semiconductors,Si:Se,responses at subbandgap wavelength,photodetector,complementary metal-oxide-semiconductor processes,selenium-doped silicon-on-insulator waveguide photodetector,selenium ion implantation
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