Electric-Stress Reliability and Current Collapse of Different Thickness Sinx Passivated Algan/Gan High Electron Mobility Transistors
Chinese Physics B/Chinese physics B(2010)
摘要
This paper investigates the impact of electrical degradation and current collapse on different thickness SiNx passivated AlGaN/GaN high electron mobility transistors. It finds that higher thickness SiNx passivation can significantly improve the high-electric-field reliability of a device. The degradation mechanism of the SiNx passivation layer under ON-state stress has also been discussed in detail. Under the ON-state stress, the strong electric-field led to degradation of SiNx passivation located in the gate-drain region. As the thickness of SiNx passivation increases, the density of the surface state will be increased to some extent. Meanwhile, it is found that the high NH3 flow in the plasma enhanced chemical vapour deposition process could reduce the surface state and suppress the current collapse.
更多查看译文
关键词
SiNx passivated AlGaN/GaN high electron mobility transistors,degradation,current collapse,surface states
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要