Modelling of the Migration Effect Occurring at an ISFET-based Coulometric Sensor-Actuator System

The migration effect, in addition to diffusion, occurring at an ion-selective field-effect transistor (ISFET)-based coulometric sensor-actuator system has been studied. A diffusion-migration model is presented, based on the numerical solution of the Nernst-Planck equations of which a digital simulation is realized. Corresponding experiments were carried out and compared with the simulation. The results are in good agreement with the simulation.