The Hall-Coefficient for Electrons in A Nearly Full Impurity Band
Solid state communications(1987)
摘要
At 3 K a change of sign of the Hall coefficient RH of a 35% compensated n-InP crystal is observed where the variable-range hopping regime dominates the conductivity. This effect is not observed for a more compensated sample and is consistent with hopping conduction by holes in a nearly full band of localized donor impurity states.
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