A Thz Ingaas/Inp Double Heterojunction Bipolar Transistor With F(Max) = 325 Ghz And Bvcbo = 10.6 V

A common-base four finger InGaAs/InP double heterostructure bipolar transistor (DHBT) has been designed and fabricated using triple mesa structure and planarization technology. All processes are on 3-inch wafers. The area of each emitter finger is 1 x 15 mu m(2). The maximum oscillation frequency (f(max)) is 325 GHz and the breakdown voltage BVCBO is 10.6 V, which are to our knowledge both the highest f(max) and BVCBO ever reported for InGaAs/InP DHBTs in China. The high speed InGaAs/InP DHBT with a high breakdown voltage is promising for submillimeter-wave and THz electronics.