Dependence of Wet Oxidation on the Defect Density in 3C-SiC

M. Eickhoff,N. Vouroutzis,A. Nielsen,G. Krötz,J. Stoemenos

Materials Science Forum（2001）

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摘要

The dependence of wet oxidation on the defect density in 3C-SiC films epitaxially grown on Si substrates was studied. Under wet atmosphere preferential oxidation at the antiphase boundaries (APBs) was observed, resulting in the formation of rough oxide surfaces. A semilogarithmic relation between defect density and the oxidation rate was found.

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关键词

antiphase boundary,cubic silicon carbide,oxidation rates,oxide roughness,planar defects,wet oxidation

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