Device Simulation Model for Transient Analysis of SiC-SBD
Materials Science Forum(2009)
摘要
We report that it seems to be necessary to select Bologna University mobility model for accurate transient phenomenon analysis of SiC-SBD under the condition of forward surge current because the maximum of the temperature inside SiC-SBD arises up to above 425 K. Other mobility models seem to be mostly inadequate because they are corresponding to the experimental condition under the temperature below 425 K.
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关键词
device simulation,transient analysis,simulation model,SiC-SBD,Schottky barrier diode,mobility model,surge current
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