Peak and Side Data Analyses to Measure Deep Levels by Dls-82e Lock-In Spectrometer

K DMOWSKI,B LEPLEY,E LOSSON,A BATH

Materials science and engineering B, Solid-state materials for advanced technology/Materials science & engineering B, Solid-state materials for advanced technology（1995）

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摘要

An analysis utilizing the low and high temperature side data of deep level transient spectra for the DLS-82E lock-in spectrometer is described. A bulk center in metal-insulator-InP structure has been examined by the DLS-82E spectrometer to demonstrate the practical application of the proposed procedure. The analyses utilizing both the peak and side data of deep level transient spectroscopy spectra were carried out and the obtained results were discussed.

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关键词

DEEP LEVELS,DLTS,INDIUM PHOSPHIDE,MIS STRUCTURES

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