A Porous Layer: An Evidence For The Deterioration Of Movpe Inn Grown At High Temperature (Similar To 650 Degrees C)

This paper indicates an evidence for the deterioration of the MOVPE InN during the growth at high temperature (similar to 650 degrees C). It is noted that the deterioration occurs near the interface and InN film becomes porous layer during the further growth. The porous layer has high electron density. The rate-limiting process of N-face InN decomposition depends on atomic hydrogen. The atomic hydrogen produced by the decomposition of NH3 is responsible for the deterioration of InN film. The crystal quality of InN improves with decreasing the porous layer which is important for MOVPE InN. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim