Room-Temperature Preparation of High-Transparency Low-Resistivity ITO Films by Ion Beam Sputtering

Low-temperature preparation of transparent conducting electrodes is essential for flexible optoelectronic devices. Tin-doped In 2 O 3 films with high transparency and low electrical resistance were prepared at room temperature using a radiofrequency ion beam sputtering system. Specimens with a low sheet resistivity of 10 −4 Ω cm and a high visible-light transmittance of 85% to 90% were obtained. Hall measurements were used to determine mobility and carrier concentration, and the effects on resistivity are discussed.