Integrated inversion channel optoelectronic devices and circuit elements for multifunctional array applications
Quantum Electronics, IEEE Journal of(1993)
摘要
An approach to laser-based optoelectronic integration is described. It is shown that by using a single epitaxial growth structure and a common processing sequence, all the electrical and optical devices required for a complete optoelectronic integrated circuit (OEIC) are realized. The demonstrated individual device performance and the implementation of an integrated combination of devices are discussed. Such applications as the implementation of a basic building block for a 2×2 smart-pixel switching node are discussed. A comparison to other laser- and modulator-based approaches is presented
更多查看译文
关键词
integrated optoelectronics,molecular beam epitaxial growth,optical switches,2 by 2 node,2×2 smart-pixel switching node,MBE,OEIC,circuit elements,electrical devices,integrated inversion channel optoelectronic devices,laser-based optoelectronic integration,multifunctional array applications,optical devices,optoelectronic integrated circuit,single epitaxial growth structure
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要