Growth of Amorphous SixC1−x Thin Films Using a Methane–silane High Energy Ion Beam

Amorphous SixC1−x films, with x ranging from 0.30 to 0.70, were grown by high-energy ion beam deposition starting from a methane–silane gas mixture. XPS analysis of the samples shows that it is possible to incorporate silicon to the amorphous carbon matrix giving an Si/C ratio depending on the methane–silane gas mixture. Raman spectra of the thermally annealed films indicate that the silicon incorporation in a-C films increases their thermal stability. There is no evidence of a complete graphitization up to 900°C, while in a-C samples graphitization occurs at about 500°C. This result shows that thermal stability is a function of the film composition.