Low turn-on voltage and 2.3 kV -Ga₂O₃ heterojunction barrier Schottky diodes with Mo anode

In this work, we propose combining a low work function anode metal and junction barrier Schottky structure to simultaneously achieve low turn-on voltage (V-on) and high breakdown voltage (BV), which alleviates the dilemma that high BV requires high Schottky barrier height (SBH) and high V-on. Molybdenum (Mo) is used to serve as the anode metal to reduce the SBH and facilitate fast turn-on to achieve a low V-on. To resolve the low SBH related low BV issue, a p-NiO/n-Ga2O3-based heterojunction structure is used to enhance beta-Ga2O3 sidewall depletion during the reverse state to improve the BV. With such a design, a low V-on = 0.64 V(@1A/cm(2)) and a high BV = 2.34 kV as well as a specific on-resistance (R-on,R-sp) of 5.3 m Omega cm(2) are demonstrated on a 10 mu m-drift layer with a doping concentration of 1.5 x 10(16) cm(-3). beta-Ga2O3 JBS diodes with low V-on = 0.64 V and a power figure of merit of 1.03 GW/cm(2) show great potential for future high-voltage and high-efficiency power electronics.