Low Operation Voltage, High-Temperature Reliable, and High-Yield BEOL Integrated Hf$_{\text{0}.\text{5}}$Zr$_{\text{0}.\text{5}}$O$_{\text{2}}$ Ferroelectric Memory Arrays

Shuming Guo,Jiajie Yu, Hao Wang, Xingcheng Jin, Hongbo Li, Chao Wu,Lin Chen,Yinyin Lin,David Wei Zhang

IEEE Transactions on Electron Devices(2024)

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