Effect of Helium Ion Implantation on 3C-SiC Nanomechanical String Resonators
arxiv(2024)
摘要
Hybrid quantum devices enable novel functionalities by combining the benefits
of different subsystems. Particularly, point defects in nanomechanical
resonators made of diamond or silicon carbide (SiC) have been proposed for
precise magnetic field sensing and as versatile quantum transducers. However,
the realization of a hybrid system may involve tradeoffs in the performance of
the constituent subsystems. In a spin-mechanical system, the mechanical
properties of the resonator may suffer from the presence of engineered defects
in the crystal lattice. This may severely restrict the performance of the
resulting device and needs to be carefully explored. Here, we focus on the
impact of defects on high Q nanomechanical string resonators made of
pre-stressed 3C-SiC grown on Si(111). We use helium ion implantation to create
point defects and study their accumulated effect on the mechanical performance.
Using Euler-Bernoulli beam theory, we present a method to determine Young's
modulus and the pre-stress of the strings. We find that Young's modulus is not
modified by implantation. Under implantation doses relevant for single defect
or defect ensemble generation, both tensile stress and damping rate also remain
unaltered. For higher implantation dose, both exhibit a characteristic change.
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