Layer-by-layer connection for large area single crystal boron nitride multilayer films
arxiv(2024)
摘要
Boron nitride (BN) is today considered as one of the most promising materials
for many novel applications including bright single photon emission, deep UV
opto-electronics, small sized solid-state neutron detector, and
high-performance two-dimensional materials, etc. Despite the recent successful
fabrication of large-area BN single-crystals (typically <= 5 atomic layers),
the scalable growth of thicker single-crystalline BN films still constitutes a
great challenge. In this work, we demonstrate an approach to grow large-area
multilayer single-crystal BN films by chemical vapor deposition on
face-centered cubic Fe-Ni (111) single crystal alloy thin films with different
stoichiometric phases. We show that the BN growth is greatly tunable and
improved by increasing the Fe content in single-crystal Fe-Ni (111). The
formation of pyramid-shaped multilayer BN domains with aligned orientation
enables a continuous connection following a layer-by-layer,
'first-meet-first-connect', mosaic stitching mechanism. By means of selected
area electron diffraction, micro-photoluminescence spectroscopy in the deep UV
and high-resolution transmission electron microscopy, the layer-by-layer
connection mechanism is unambiguously evidenced, and the stacking order has
been verified to occur as unidirectional AB and ABC stackings, i.e., in the
Bernal and rhombohedral BN phase.
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