Contribution to the percolation threshold study of Silicon carbide filled polydimethylsiloxane composites used for field grading application

The correlations between the electrical behavior and microstructural properties of samples consisting of particle composites fabricated from SiC particles embedded in a silicone matrix, were investigated using X-ray computed tomography. In the voltage field range 200-1000 V/mm, the measured conductivity as a function of SiC volume fraction exhibits two distinct gaps. Upon further investigations, we attribute these observations to percolation thresholds at the microscale. The first gap, corresponding to interconnections between SiC particles that were originally disconnected, is more significant at higher voltage; while the second one, resulting from shortening conductivity pathways between the external surfaces of the samples with the increase of SiC volume fraction, seems more sensitive to lower voltages and is correlated with a decrease of the tortuosity of the percolated SiC network.