Reliability Study of Two-Step Plasma-Activated Copper-Copper Direct Bonding in Ambient

Copper-copper direct bonding is a promising technology for various applications such as microelectronics, microelectromechanical systems, and power electronics. Plasma-activated copper-copper direct bonding is a two-step bonding process that has shown great potential for high-quality copper-copper bonding in ambient conditions. In this paper, we present reliability study of a two-step plasma-activated copper-copper direct bonding process by investigating the bonding strength and the long-term stability of the copper-copper bonds. The reliability of the bonding technique is investigated using various techniques such as shear test, aging test, and highly accelerated temperature and humidity stress test. The results show that the plasma-activated copper-copper direct bonding process can achieve a high bonding strength and good long-term stability, which makes it a promising technology for various applications.