Investigating the Impact of Oxygen Surface Plasma Treatments on the Structural and Electrical Properties of Graphene

This study investigated the variations in the structural and electrical characteristics of graphene under different O2 plasma treatment conditions and durations, employing Raman spectroscopy and Id-Vg and Id-Vd measurements. Initially, we examined the Raman spectra and the Id-Vg and Id-Vd curves of graphene following remote O2 plasma treatments ranging from 1 to 4 s. We observed the p -doping effects on the electrical properties of graphene. Subsequently, we transitioned to a reactive ion etching plasma treatment mode, followed by a comparative analysis to determine the most suitable plasma mode for enhancing the graphene properties without compromising its bonding network integrity. Notably, a shift in the Raman peak positions and intensities owing to the plasma treatment duration revealed that the high-energy plasma ions disrupted the symmetry of sp2 orbital bonds of graphene, leading to the formation of sp3 hybridization orbital bonds. Furthermore, we confirmed the restorative effects of the heat treatment by observing changes in the electrical characteristics when the plasma -treated graphene was annealed in a furnace.