Optimized energy storage performance in (Ba_0.8Sr_0.2)TiO₃-based ceramics via Bi(Zn_0.5Hf_0.5)O₃-doping

Because of high voltage resistance and high-power density, traditional ceramic dielectrics have found extensive use in electronic and pulsed power systems. Nevertheless, their subpar energy storage capabilities pose a challenge in meeting the demands of integrated and lightweight power electronic devices. This paper employs compositional design to incorporate a Bi(Zn0.5Hf0.5)O-3 (BZH) relaxation component, aiming to enhance the electrical breakdown strength or effective dielectric constant, ultimately increasing the energy storage density. The 0.90(Ba0.8Sr0.2)TiO3-0.10Bi(Zn1/2Hf1/2)O-3 ceramics processed by the conventional solid-phase reaction method demonstrate a significant recoverable energy density of 4.20 J cm(-3), an exceptional energy storage efficiency of 95.5%, with a 450 kV cm(-1) high breakdown strength and impressive charge/discharge performance. This investigation presents a novel framework for enhancing energy storage performance in other material systems.