Exploring the Influence of Copper Chemical Displacement Duration on Nonvolatile Oxide-based Resistive Memory Device Characteristics

Chu-En Lin, Bo-Qin Yu, Yi-Ching Cheng,Hsin-Chiang You, I-Nan Chang, Jung-Chih Lin,Chi-Chang Wu

SENSORS AND MATERIALS（2024）

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resistive memory,electrochemical metallization,chemical displacing technique,copper electrode

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