Low-Frequency Noise in InGaAs-OI 1T-DRAMs

Carlos Marquez,Carlos Navarro,Siegfried Karg, Ruben Ortega,Cezar Zota, Francisco Gamiz

2023 International Conference on Noise and Fluctuations (ICNF)（2023）

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摘要

This work addresses the low-frequency noise characterization of III-V InGaAs transistors employed as dynamic random access memory (DRAM) cells. The experimental power spectral density of current follows a flicker-noise characteristic which points to carrier number fluctuations as the main noise source. However, mobility degradation associated with carrier trapping/de-trapping should also be considered in these devices.

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关键词

Low-frequency Noise,Memory Cells,Spectral Density,Noise Sources,Random Access Memory,Dynamic Memory,Flicker Noise,Trapping,Aspect Ratio,Drain Current,Silicon-on-insulator,Noise Density,Back-gate Voltage,Static Random Access Memory,Strong Inversion

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