Linear and non-linear optical properties of (Ge1S2)100-X(As2Te3)X (0 x 100) films

The current investigation clarifies the optoelectronics studies for (Ge2S8)100-x(As2Te3)x (GSAT) (0 <= x <= 100) noncrystalline films. The GSAT glassy system has been synthesised using the conventional melting quench method. GAST films were thermally deposited on chemically washed glass substrates. The reflectance spectra were used to precisely evaluate the absorbance (x), index of refraction (n), and film thicknesses (t) for GSAT glasses. The values of the optical band gap Eg are lessening; nevertheless, the n values rise with the enhancement of As2Te3 at. %. Sellmeier's dispersion model helps one to estimate the dispersion parameters vis. the oscillator position (lambda o) and strength (So), the dispersion energy (Ed), and the static index of refraction (no). Furthermore, the compositional dependence of the dielectric optical parameters has been investigated. The obtained results suggest that GSAT films are suitable for many optical devices, like optical sensors, switches, lenses, mirrors, infrared sensors, and detectors.