Large Memory Window Antifuse HfO $_{\text{2}}$ -Based One-Resistor and One-OTP NVMs Featuring Excellent Disturbance Tolerance and Robust 200 $^{\circ}$ C Retention

In this work, CMOS-compatible antifuse HfO $_{\text{2}}$ -based one-resistor and one-OTP (1R1O) nonvolatile memories (NVMs) were successfully fabricated and achieved a record-high pulsed memory window (MW) of 2 $\times$ 10 $^{\text{8}}$ at a low read voltage of 1 V for the first time. By modulating the switching oxide thickness, the 1R1O NVMs with a 5 nm HfO $_{\text{2}}$ tested under a crossbar memory array scheme can tolerate a write/read disturbance of 2 $\times$ 10 $^{\text{7}}$ /10 $^{\text{9}}$ cycles and show a robust 200 $^{\circ}$ C retention with an extremely stable pulsed MW of 2 $\times$ 10 $^{\text{8}}$ after the read disturbance (RD) of 10 $^{\text{9}}$ cycles. According to pulsed characteristic and reliability viewpoints, the 5 nm HfO $_{\text{2}}$ 1R1O NVMs are very suitable candidates for Internet of Things (IoTs) and automotive (ATV) security integrated circuits (ICs).