Unleashing Endurance Limits of Emerging Memory: Multi-Level FeRAM Recovery Array Empowered by a Coordinated Inverting Amplifier Circuit

Asymmetric field cycling recovery (AFCR) with alternating opposite low ${E}$ -field cycling is proposed to restore a fatigued ferroelectric (FE) capacitor and is experimentally demonstrated for up to 10(12) switching cycles, thereby extending the endurance of FeRAM. Positive and negative asymmetric minor loops (AmLs) with AFCR exhibit nondegradation and complete restoration of Delta 2P(r) toward unlimited endurance operation. Furthermore, an FE random access memory (FeRAM) array circuit with an inverting amplifier is designed to simultaneously execute Write/Read and Recovery procedures via the AFCR scheme.