Broadband and Low-Noise Mixer Module for 300-GHz Band Based on Fermi-Level Managed Barrier Diode on SiC Platform

A broadband and low-noise fundamental mixer module for operation in the 300-GHz band was developed based on an epi-layer-transferred Fermi-level managed barrier (FMB) diode on an SiC substrate. A newly designed FMB diode module exhibited an intermediate-frequency bandwidth of about 42 GHz and an extremely-low noise-equivalent-power of 3*10 ^-19 W/Hz at around 300 GHz with a local oscillator power of only 120 uW.