Integrated GaN Power Detector for High Power Millimeter-Wave Applications

This paper presents the design and measured performance of an integrated Gallium-Nitride-based power detector, which is tailored to monitor the output power of a state-of-the-art Gallium-Nitride high power amplifier in E-band (71-76 GHz). To show the high power application, the temperature-compensated power detector is driven with a 1W millimeter-wave signal, which has not been shown before at frequencies in the range of 68-74 GHz. The measured performance sets the state-of-theart for integrated millimeter-wave power detection in terms of maximum detected power and shows the first on-chip integrated Gallium-Nitride millimeter-wave detector.