Ultra-high resistive switching current ratio and improved ferroelectricity and dielectric tunability performance in a BaTiO₃/La_0.7Sr_0.3MnO₃ heterostructure by inserting a SrCoO_2.5 layer

A BaTiO3/SrCoO2.5 (BTO/SCO) bilayer and a BTO single film were prepared by radio frequency magnetron sputtering on La0.7Sr0.3MnO3 (LSMO) buffered SrTiO3 (001) substrates. Interestingly, compared with reported BTO-based films, the BTO/SCO/LSMO heterostructure has a maximum ON/OFF current ratio of similar to 945. More interestingly, compared with the BTO single layer, a larger P-r (similar to 18.4 mu C cm(-2)) and larger dielectric tunability (similar to 71.9%) were achieved in the BTO/SCO bilayer. The improved performance may be attributed to the large tetragonality and improved oxygen vacancy concentrations in the BTO/SCO/LSMO heterostructure. Furthermore, our BTO/SCO/LSMO stacks exhibit potential for flexible electronic informational devices.