A Compact Model of FTJ Covering the Trapping/De-trapping Charateristics

Trap effects in the metal-ferroelectric-silicon (MFS) FTJs are modeled in this work. From the charge conservation and voltage balancing principles, traps at the interface between the ferroelectric (FE) layer and silicon are incorporated into the FTJs' current-voltage characteristics. The trapping/de-trapping dynamics are coupled to the polarizations via a two-state model framework. The electrostatic potentials hence the barriers of tunneling, the trap charge state, and relaxations are all captured. Implications on FTJ operations under different frequencies are discussed around the trap effects on TER.