A GaN HEMT Integrated Power Module with Silver Sintering Processes

Gallium nitride (GaN) high electron mobility transistors (HEMTs) are highly favored for high-power-density energy conversion systems. However, the packaging technology plays a critical role in determining device performance and reliability. The presence of parasitic inductances in the power loop, gate loop, and coupling between them can lead to voltage overshoot, ringing, crosstalk, and additional switching losses. Additionally, thermal management of GaN power devices is crucial due to their smaller die size. In this work, we propose an integrated power module for GaN HEMTs. The module utilizes a multilayer PCB to minimize parasitic inductances and a ceramic substrate for excellent thermal dissipation. We adopt silver sintering processes to enhance the module's thermal performance and reliability. Our proposed module demonstrates that power loop and gate loop inductances are 1.7 nH and around 2 nH, respectively. Moreover, the simulated junction to case thermal resistance is impressively low, measuring only 0.05 °C/m.W. These results highlight the potential of our approach in addressing the challenges of parasitic inductances and thermal management in GaN HEMT power modules.